Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance-Reference-Cited by-同舟云学术

Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Published:2017-09-28 Issue:42 Volume:29 Page:1703811
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Guo Zhinan¹²,Chen Si²,Wang Zhongzheng¹³,Yang Zhenyu³,Liu Fei⁴,Xu Yanhua²,Wang Jiahong¹,Yi Ya¹,Zhang Han²,Liao Lei³,Chu Paul K.⁵,Yu Xue-Feng¹

Affiliation:

1. Institute of Biomedicine and Biotechnology; Shenzhen Institutes of Advanced Technology; Chinese Academy of Sciences; Shenzhen 518055 P. R. China

2. SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province; College of Optoelectronic Engineering; Shenzhen University; Shenzhen 518060 P. R. China

3. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education; Wuhan University; Wuhan 430072 P. R. China

4. Department of Physics; The University of Hong Kong; 999077 Hong Kong P. R. China

5. Department of Physics and Materials Science; City University of Hong Kong; 999077 Hong Kong P. R. China

Funder

National Natural Science Foundation of China

Frontier Research Key Project of the Chinese Academy of Sciences

Shenzhen Science and Technology Research

Science and Technology Innovation Commission of Shenzhen

City University of Hong Kong Strategic Research

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science