Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source-Reference-Cited by-同舟云学术

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Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

Published:2018-05-18 Issue:11 Volume:50 Page:1158-1162
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf Interface Anal

Author:

Renault O.¹^ORCID,Martinez E.¹,Zborowski C.¹²,Mann J.³,Inoue R.⁴,Newman J.³,Watanabe K.⁴

Affiliation:

1. Université Grenoble Alpes; CEA, LETI; 38000 Grenoble France

2. Department of Physics, Chemistry and Pharmacy; University of Southern Denmark; Odense M Denmark

3. Physical Electronics; 18725 Lake Drive Chanhassen MN 55317 USA

4. ULVAC-PHI, Inc; 2500 Hagisono Chigasaki Kanagawa 253-8522 Japan

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.6451/fullpdf

Reference16 articles.

1. High-energy X-ray photoelectron spectroscopy with new monochromatised Cu Kα1 X-rays; characteristics, capabilities and limitations;Mozlemzadeh;Surf Interface Anal,2006

2. Monochromatized Ag La X-rays as a source for higher energy XPS;Yates;Surf Interface Anal,1983

3. Springer Series in Surface Science,2016

4. Calculations of electron inelastic mean free paths. X. Data for 41 elemental solids over the 50 eV to 200 keV range with the relativistic full Penn algorithm

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