Affiliation:
1. Tokyo Metropolitan University 1‐1, Minami‐ohsawa, Hachioji Tokyo 192‐0397 Japan
Abstract
Along with the commercialization of SiC‐MOSFETs and progress in the development of GaN power devices, high‐speed, high‐frequency switching and reduction in conduction loss of power devices are expected. Hence reduction of the size and increase of conversion efficiency of power electronics equipment is greatly expected. On the other hand, even if power devices are switched at high speed and high frequency, the loss of passive devices such as transformers, inductors, and capacitors used in power converters increases, making it difficult to make the power converters smaller than expected. In other words, there is a demand for performance improvements of passive devices from various viewpoints, including miniaturization and low loss, which are compatible with high‐speed, high‐frequency switching operations of power devices. This paper introduces recent research results on loss evaluation methods considering the operating state of passive devices used in small‐to‐medium‐capacity power converters those perform high‐frequency switching operations. © 2023 Institute of Electrical Engineer of Japan and Wiley Periodicals LLC.
Subject
Electrical and Electronic Engineering