P-44: Study on the Factor Affecting the Stress Reliability of GOA-Reference-Cited by-同舟云学术

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P-44: Study on the Factor Affecting the Stress Reliability of GOA

Published:2018-05 Issue:1 Volume:49 Page:1361-1364
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Du Ruifang¹,Ma Xiaoye¹,Ma Rui¹,Gu Xiaofang¹,Zhang Donghui¹,Liu Guodong¹,Lv Fengzhen¹,Wang Zhangtao¹,Shao Xibin¹,Xue Hailin¹

Affiliation:

1. BOE HEFEI XINSHENG Optoelectronics Tec. Co. LTD.; Hefei, Anhui China

Publisher

Wiley

Reference6 articles.

1. High-performance a-IGZO TFT with gate dielectric fabricated at room temperature[J];Lee;IEEE Electron Device Letters,2010

2. Physics of amorphous silicon based alloy field-effect transistors;Shur;Apply.Phys,1984

3. Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors;Powell;Appl.Phys.Lett.,1983

4. Characterization of instability in amorphous silicon thin-film transistors;Kaneko;Jpn.Appl.phys.,1991

5. Threshold Voltage Drift of Amorphous Silicon TFT in Integrated Drivers for Active Matrix LCDs;Lebrun;EURODISPLAY,2002

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P‐8: Distinguished Poster: Realization of Dynamic Local Refresh on LCD with Novel Partial Scan GOA;SID Symposium Digest of Technical Papers;2024-06

2. Realization of Dynamic Local Refresh on Liquid Crystal Display with Novel Partial Scan Gate Driver on Array;Journal of the Society for Information Display;2024-05

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