P-43: Implementation of Digital Thin-Film Transistor Integrated Ambient Light Sensor with High Reliability
Author:
Affiliation:
1. School of Electronic and Computer Engineering; Peking University; Shenzhen China
2. Shenzhen China Star Optoelectronics Technology Co., Ltd; Guangdong China
3. Active Matrix Display Beijing Engineering Research Center; Beijing China 100871
Funder
Shenzhen Municipal Scientific Program
Shenzhen Government Competitive Research
National Natural Science Foundation of China
Publisher
Wiley
Reference9 articles.
1. Highly Reliable Bidirectional a-InGaZnO Thin-Film Transistor Gate Driver Circuit for High-Resolution Displays;Lin;IEEE Trans. Electron Devices,2016
2. Design of Bidirectional and Low Power Consumption Gate Driver in Amorphous Silicon Technology for TFT-LCD Application;Zheng;IEEE J. Display Technology,2013
3. A Compact Bi-Direction Scannable a-Si:H TFT Gate Driver;Liao;IEEE J. Display Technology,2015
4. Robust Gate Driver Design with Etching-Stop-Layer Type InGaZnO TFTs Using Stack Buffer Structure;Liao;Proc. SID Symp. Dig.,2017
5. A Simple Low Temperature Workable a-Si: H TFT Integrated Gate Driver on Array;Liao;Proc. SID Symp. Dig.,2015
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1. Influence of Hot Carriers and Illumination Stress on a-InGaZnO TFTs With Asymmetrical Geometry;IEEE Electron Device Letters;2020-05
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