P-28: Robust Gate Driver Design with Etching-Stop-Layer Type InGaZnO TFTs Using Stack Buffer Structure
Author:
Affiliation:
1. School of Electronic and Computer Engineering; Peking University; Shenzhen China
2. Shenzhen China Star Optoelectronics Technology Co., Ltd; Guangdong China
Publisher
Wiley
Reference6 articles.
1. Integrated a-Si:H TFT Gate Driver Circuits on Large Area TFT-LCDs;Moon;Proc. SID Symp. Dig,2007
2. Design of bidirectional and highly stable integrated hydrogenated amorphous silicon gate driver circuits;Lin;IEEE J. Display Technology,2011
3. A Novel High Reliable Integrated Gate Driver with Bi-Scanning Structure using a-Si TFT for Large Size FHD TFT-LCD TVs;Shin;Proc. SID Symp. Dig.,2010
4. Design of Bidirectional and Low Power Consumption Gate Driver in Amorphous Silicon Technology for TFT-LCD Application;Zheng;IEEE J. Display Technology,2013
5. Accelerated stress testing of a-Si:H pixel circuits for AMOLED displays;Sakariya;IEEE Trans. Electron Devices,2005
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