Analysis of the floating-gate transistor using the charge sheet model-Reference-Cited by-同舟云学术

Analysis of the floating-gate transistor using the charge sheet model

Published:2015-11-19 Issue:4 Volume:29 Page:675-685
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Medina-Vazquez A. S.¹,Meda-Campana M. E.²,Gurrola-Navarro M. A.¹,Becerra-Alvarez E. C.¹,Lopez-Delgadillo E.³

Affiliation:

1. Universidad de Guadalajara, Centro Universitario de Ciencias Exactas e Ingenierias; Blvd. Marcelino Garcia Barragan #1421, esq. Calzada Olimpica C.P. 44430 Guadalajara Jalisco Mexico

2. Universidad de Guadalajara - Centro Universitario de Ciencias Economico y Administrativas; Anillo Periferico Norte #799, Los Belenes C.P. 45100 Zapopan Jalisco Mexico

3. Electronics Systems Department, Basic Sciences Center; Universidad Autonoma de Aguascalientes; Av. Universidad #940,Ciudad Universitaria C.P. 20131 Aguascalientes Mexico

Funder

CONACyT Mexico

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Reference31 articles.

1. A functional MOS transistor featuring gate-level weighted sum and threshold operations;Shibata;IEEE Trans Electron Devices,1992

2. Charge-sheet modelling of MOS I-V fundamental nonlinearities in MOS-C continuous-time filters;Flandre;Electron Lett,1995

3. A charge sheet model of the MOSFET;Brews;Solid State Electron,1978

4. Mosfet Modeling for Circuit Analysis and Design;Galup-Montoro;World Sci,2007

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