Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications-Reference-Cited by-同舟云学术

Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications

Published:2005 Issue:1 Volume:16 Page:70-80
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF and Microwave Comp Aid Eng

Author:

Camarchia V.,Guerrieri S. Donati,Pirola M.,Teppati V.,Ferrero A.,Ghione G.,Peroni M.,Romanini P.,Lanzieri C.,Lavanga S.,Serino A.,Limiti E.,Mariucci L.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Reference19 articles.

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2. GaN as Seen by the Industry

3. , , , , , , , , , and , AlGaN/GaN HEMTs on SiC: towards power operation at V-band, IEEE Int Electron Devices Mtg (IEDM'03), Washington, DC, 2003, pp. 23.2.1-23.2.4.

4. III–nitrides: Growth, characterization, and properties

5. Electronic, optical, and structural properties of some wurtzite crystals

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