Author:
Kodama Masahito,Sugiyama Takahide,Uesugi Tutomu
Abstract
AbstractThe device parameter dependence of temperature characteristics is evaluated for lateral power MOSFET having buried gates in the lower channel area and having trench gate/drains, produced by the solid‐phase epitaxy method. The device parameters considered were the gate length and the n‐drift length. The temperature coefficient (change rate) of the threshold value depends on the gate length and this tendency tends to increase as the gate length increases. However, there was no dependence on the n‐drift length. In addition, the temperature coefficient of the specific on‐resistance depends on the n‐drift length, to a degree that increases as the n‐drift length increases. However, there was no dependence on the gate length. The above facts indicate that the temperature dependence of the device characteristics tends to decrease as the device size decreases. © 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(5): 55–61, 2001
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy
Reference8 articles.
1. MeiPC FujikuraK KawanoT MalhiS.A high performance 30 V extended drain RESURF CMOS device for VLSI intelligent power applications. IEEE Symposium on VLSI Technology Digest of Technical Papers p81–82 1994.
2. High voltage 60 V SOI DMOSFET;Kawaguchi Y;Tech Rep IEICE,1996
3. The effect of temperature on lateral DMOS transistors in a power IC technology
4. The temperature dependence of breakdown voltage and on-resistance of LDMOS's
5. A solid-phase epitaxy with clean surface formation using SiH4 and Evaluation of SOI Layer