Application of <scp>X‐parameter</scp> model of gallium nitride device for a continuous broadband Doherty power amplifier design-Reference-Cited by-同舟云学术

Application of X‐parameter model of gallium nitride device for a continuous broadband Doherty power amplifier design

Published:2022-10-13 Issue: Volume: Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Wu Meilin¹,Crupi Giovanni²,Yu Chao³,Cai Jialin¹^ORCID

Affiliation:

1. The Key Laboratory of RF Circuit and System, Ministry of Education Hangzhou Dianzi University Hangzhou China

2. BIOMORF Department University of Messina Messina Italy

3. The State Key Laboratory of Millimeter Waves Southeast University Jiangsu China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

Reference41 articles.

1. NTT DOCOMO INC.White Paper 5 G Evolution and 6 G 2020.

2. High power outphasing modulation;Chireix H;Proc Inst Radio Eng,1935

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