Fluorinated Polyimide Tunneling Layer for Efficient and Stable Perovskite Photovoltaics

Author:

Liu Chunming123,Yu Wei123,Li Yuheng123,Wang Can124,Zhang Zilong12,Li Chi124,Liang Lusheng12,Chen Kangcheng5,Liu Lin6,Li Tinghao12,Yu Xuteng124,Wang Yao123,Gao Peng1234ORCID

Affiliation:

1. Institution CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou, Fujian 350002 China

2. Laboratory for Advanced Functional Materials, Xiamen Institute of Rare Earth Materials, Haixi Institute Chinese Academy of Sciences Xiamen 361021 China

3. Fujian College University of Chinese Academy of Sciences Fuzhou 350002 China

4. University of Chinese Academy of Sciences Beijing 100049 China

5. College of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China

6. Instrumentation and Service Center for Physical Sciences Westlake University Hangzhou 310024 China

Abstract

AbstractDespite the remarkable progress of perovskite solar cells (PSCs), challenges remain in terms of finding effective and viable strategies to enhance their long‐term stability while maintaining high efficiency. In this study, a new insulating and hydrophobic fluorinated polyimide (FPI: 6FDA‐6FAPB) was used as the interface layer between the perovskite layer and the hole transport layer (HTL) in PSCs. The functional groups of FPI play a pivotal role in passivating interface defects within the device. Due to its high work function, FPI demonstrates field‐effect passivation (FEP) capabilities as an interface layer, effectively mitigating non‐radiative recombination at the interface. Notably, the FPI insulating interface layer does not impede carrier transmission at the interface, which is attributed to the presence of hole tunneling effects. The optimized PSCs achieve an outstanding power conversion efficiency (PCE) of 24.61 % and demonstrate excellent stability, showcasing the efficacy of FPI in enhancing device performance and reliability.

Funder

National Natural Science Foundation of China

Publisher

Wiley

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