Control of Polarity in Kagome‐NiAs Bismuthides

Author:

Gibson Quinn D.12ORCID,Wen Dongsheng12ORCID,Lin Hai12,Zanella Marco12ORCID,Daniels Luke M.12ORCID,Robertson Craig M.12ORCID,Claridge John B.12ORCID,Alaria Jonathan3ORCID,Dyer Matthew S.12ORCID,Rosseinsky Matthew J.12ORCID

Affiliation:

1. Department of Chemistry University of Liverpool Crown Street Liverpool L69 7ZD United Kingdom

2. Present Address for Quinn D. Gibson Aberdeen Centre for Energy and Sustainability Department of Chemistry University of Aberdeen Aberdeen AB24, 3FX United Kingdom

3. Department of Physics University of Liverpool Oliver Lodge Laboratory Liverpool L69 7ZE United Kingdom

Abstract

AbstractA 2×2×1 superstructure of the P63/mmc NiAs structure is reported in which kagome nets are stabilized in the octahedral transition metal layers of the compounds Ni0.7Pd0.2Bi, Ni0.6Pt0.4Bi, and Mn0.99Pd0.01Bi. The ordered vacancies that yield the true hexagonal kagome motif lead to filling of trigonal bipyramidal interstitial sites with the transition metal in this family of “kagome‐NiAs” type materials. Further ordering of vacancies within these interstitial layers can be compositionally driven to simultaneously yield kagome‐connected layers and a net polarization along the c axes in Ni0.9Bi and Ni0.79Pd0.08Bi, which adopt Fmm2 symmetry. The polar and non‐polar materials exhibit different electronic transport behaviour, reflecting the tuneability of both structure and properties within the NiAs‐type bismuthide materials family.

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

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