Building Block‐Inspired Hybrid Perovskite Derivatives for Ferroelectric Channel Layers with Gate‐Tunable Memory Behavior

Abstract

AbstractFerroelectric photovoltaics driven by spontaneous polarization (Ps) holds a promise for creating the next‐generation optoelectronics, spintronics and non‐volatile memories. However, photoactive ferroelectrics are quite scarce in single homogeneous phase, owing to the severe Ps fatigue caused by leakage current of photoexcited carriers. Here, through combining inorganic and organic components as building blocks, we constructed a series of ferroelectric semiconductors of 2D hybrid perovskites, (HA)2(MA)n‐1PbnBr3n+1 (n=1–5; HA=hexylamine and MA=methylamine). It is intriguing that their Curie temperatures are greatly enhanced by reducing the thickness of inorganic frameworks from MAPbBr3 (n=∞, Tc=239 K) to n=2 (Tc=310 K, ΔT=71 K). Especially, on account of the coupling of room‐temperature ferroelectricity (Ps≈1.5 μC/cm2) and photoconductivity, n=3 crystal wafer was integrated as channel field effect transistor that shows excellent a large short‐circuit photocurrent ≈19.74 μA/cm2. Such giant photocurrents can be modulated through manipulating gate voltage in a wide range (±60 V), exhibiting gate‐tunable memory behaviors of three current states (“‐1/0/1” states). We believe that this work sheds light on further exploration of ferroelectric materials toward new non‐volatile memory devices.