Low-power and low-noise complementary metal oxide semiconductor distributed amplifier using the gain-peaking technique-Reference-Cited by-同舟云学术

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Low-power and low-noise complementary metal oxide semiconductor distributed amplifier using the gain-peaking technique

Published:2016-05-31 Issue:3 Volume:45 Page:319-337
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int. J. Circ. Theor. Appl.

Author:

Izadi Saadi Rokhsare¹,Hakimi Ahmad²

Affiliation:

1. Department of Electrical and Computer Engineering; Graduated University of Advanced Technology; Kerman Iran

2. Department of Electrical; Shahid Bahonar University of Kerman; Kerman Iran

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. A 22-31 GHz distributed amplifier based on high-pass transmission lines using 0.18 CMOS technology;Chen;IEEE Microwave and Wireless Components Letters,2011

2. Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design;Chien;IEEE Journal of Solid-State Circuits,1999

3. Adaptive frequency compensation for maximum and constant bandwidth feedback amplifiers;Pennisi;International Journal of Circuit Theory and Applications,2013

4. Bandwidth improvement technique of distributed amplifiers using combined filtering structures;Slimane;AEU-International Journal of Electronics and Communications,2011

5. Design of ultra-low-voltage RF frontends with complementary current-reused architectures;Hsieh;IEEE Transactions on Microwave Theory and Techniques,2007

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