P‐99: The Size and Temperature Effect of Ideality Factor in GaN/InGaN Multiple Quantum Wells Micro Light Emitting Diodes (Micro‐LEDs)
Author:
Affiliation:
1. Hong Kong University of Science and Technology Hong Kong China
2. Southern University of Science and Technology Shenzhen China
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14235
Reference15 articles.
1. Wafer-scale monolithic hybrid integration of Si-based IC and III-V epi-layers-A mass manufacturable approach for active matrix micro-LED micro-displays
2. Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology
3. 360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays
4. GaN-based LED micro-displays for wearable applications
5. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light‐emitting diodes
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