P‐213: Late‐News‐Poster: Electroluminescence of Oxide Phosphor in Metal‐Oxide‐Semiconductor Structure
Author:
Affiliation:
1. Interdisciplinary Program of LED and Solid State Lighting Engineering Pukyong National University Busan 48513 Republic of Korea
2. Department of Display Engineering Pukyong National University Busan 48513 Republic of Korea
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14250
Reference14 articles.
1. Oxide thin-film electroluminescent devices and materials
2. Zn 2 SiO 4 as a host material for phosphor-emitting layers of TFEL devices
3. Electroluminescence of Zn2SiO4:Mn Thin-Film Phosphor;Kitai A.;SID Digest.,1994
4. Electronic structure and optical properties of ZnSiO3 and Zn2SiO4;Zh. Karazhanov S.;J. Appl. Phys.,2009
5. Microwave dielectric characteristics of ceramics in Mg2SiO4–Zn2SiO4 system
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