P-110: Efficient InP-based Quantum Dot Light Emitting Diodes utilizing a Crosslinkable Hole Transport Layer
Author:
Affiliation:
1. Functional Materials and Devices; Fraunhofer Institute for Applied Polymer Research; Geiselbergstr. 69 14476 Potsdam Germany
2. DUKSAN NEOLUX CO., LTD; 21-32, Ssukgol-gil, Ipjang-myeon, Seobuk-gu Cheonan-si, Chungcheongnam-do Korea
Funder
Ministry of Trade, Industry and Energy
Publisher
Wiley
Reference7 articles.
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2. Efficiency enhancement of InP-based inverted QD-LEDs by incorporation of a polyethylenimine modified Al:ZnO layer;Kim;J. Soc. Inf. Disp,2015
3. Cross-Linkable Hole-Transport Materials Improve the Device Performance of Perovskite Light-Emitting Diodes, ACS Appl;Huang;Mater. Interfaces,2016
4. Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots;Anikeeva;Phys. Rev. B.,2008
5. Electrostatically shielded quantum confined Stark effect inside polar nanostructures;Riyopoulos;Nanoscale Res. Lett.,2009
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