P-109: Reduced Contact Resistance with MoOxInjection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level-Reference-Cited by-同舟云学术

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P-109: Reduced Contact Resistance with MoOxInjection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level

Published:2016-05 Issue:1 Volume:47 Page:1535-1538
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Roh Heebum¹,Roh Jeongkyun¹,Shin Hyeonwoo¹,kim Hyeok²,Lee Changhee¹

Affiliation:

1. Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea

2. Construction Equipment Technology Center, Korea Institute of Industrial Technology (KITECH), Hayang-ro, Hayang-eup, Gyeongsan 38430, Korea

Publisher

Wiley

Reference8 articles.

1. Organic smart pixels

2. A Solution-Processed Organic Thin-Film Transistor Backplane for Flexible Multiphoton Emission Organic Light-Emitting Diode Displays

3. 39.4L:Late-News Paper: Vertical Organic Transistors (V-OFETs) for Truly Flexible AMOLED Displays

4. 65.4: Organic Thin Film Transistor Driven Backplane for Flexible Electrophoretic Display

5. Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

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