High-Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis-Reference-Cited by-同舟云学术

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High-Performance Organic Transistor Memory Elements with Steep Flanks of Hysteresis

Published:2008-09-10 Issue:17 Volume:18 Page:2593-2601
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wu Weiping,Zhang Hongliang,Wang Ying,Ye Shanghui,Guo Yunlong,Di Chongan,Yu Gui,Zhu Daoben,Liu Yunqi

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Advanced Materials for Optics and Electronics 10579257 2000 10 6

2. An Organic Field-Effect Transistor with Programmable Polarity

3. Easily Processable Phenylene−Thiophene-Based Organic Field-Effect Transistors and Solution-Fabricated Nonvolatile Transistor Memory Elements

4. Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret

5. Nonvolatile Memory Elements Based on Organic Materials

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4. Polyarylamine-Based Polymeric Electret with Tunable Pendant Groups for Photorecoverable Organic Transistor Memory;ACS Applied Polymer Materials;2023-09-21

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