Selective Angle Electroluminescence of Light-Emitting Diodes based on Nanostructured ZnO/GaN Heterojunctions-Reference-Cited by-同舟云学术

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Selective Angle Electroluminescence of Light-Emitting Diodes based on Nanostructured ZnO/GaN Heterojunctions

Published:2009-11-09 Issue:21 Volume:19 Page:3471-3475
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Fu Hang-Kuei,Cheng Cheng-Liang,Wang Chun-Hsiung,Lin Tai-Yuan,Chen Yang-Fang

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Room-Temperature Ultraviolet Nanowire Nanolasers

2. Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode

3. Observation of 394nm electroluminescence from low-temperature sputtered n-ZnO∕SiO2 thin films on top of the p-GaN heterostructure

4. Electroluminescence in n-ZnO Nanorod Arrays Vertically Grown on p-GaN

5. Ultraviolet Electroluminescence from ZnO/Polymer Heterojunction Light-Emitting Diodes

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