Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors-Reference-Cited by-同舟云学术

Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

Published:2009-03-10 Issue:5 Volume:19 Page:763-771
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Reese Colin,Bao Zhenan

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference45 articles.

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