Interfacial Strain: The Driving Force for Selective Orbital Occupancy in Manganite Thin Films-Reference-Cited by-同舟云学术

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Interfacial Strain: The Driving Force for Selective Orbital Occupancy in Manganite Thin Films

Published:2007-12-17 Issue:18 Volume:17 Page:3918-3925
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Abad L.,Laukhin V.,Valencia S.,Gaup A.,Gudat W.,Balcells L.,Martínez B.

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Colossal magnetoresistant materials: the key role of phase separation

2. Orbitronics: The Intrinsic Orbital Current inp-Doped Silicon

3. Low Temperature Magnetoresistance and the Magnetic Phase Diagram ofLa1−xCaxMnO3

4. Spintronics: A Spin-Based Electronics Vision for the Future

5. Strain-induced metal–insulator phase coexistence in perovskite manganites

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1. Strain related new sciences and devices in low-dimensional binary oxides;Nano Energy;2022-12

2. Spin Glass State in Strained La2/3Ca1/3MnO3 Thin Films;Nanomaterials;2022-10-18

3. Uniaxial Strain and Hydrostatic Pressure Engineering of the Hidden Magnetism in La_1–xCa_xMnO₃ (0 ≤ x ≤ 1/2) Thin Films;Nano Letters;2022-09-06

4. Uniaxial Strain and Hydrostatic Pressure Engineering of the Hidden Magnetism in La_1-xCa_xMnO₃ (0 ≤ x ≤ 1/2) Thin Films;NANO LETT;2022

5. Role of symmetry mismatch, charge transfer and low dimensionality in the magnetic order of CaMnO3/SrTiO3 ultrathin heterostructures;AIP Advances;2021-02-01

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