Experimental and Monte Carlo based dosimetric investigation of a novel 3 mm radiosurgery 3 MV beam using the microSilicon detector

Author:

Saße Katrin1,Albers Karina1,Klassen Peter Douglas2,Marianayagam Neelan J.3,Weidlich Georg4,Schneider M. Bret4,Chang Steven3,Adler John4,Poppe Björn1,Looe Hui Khee1,Eulenstein Daniela5

Affiliation:

1. University Clinic for Medical Radiation Physics, Medical Campus Pius Hospital Carl von Ossietzky University Oldenburg Germany

2. Bonifatius Hospital Lingen Lingen Germany

3. Department of Neurosurgery Stanford University School of Medicine Palo Alto California USA

4. ZAP Surgical Systems San Carlos California USA

5. PTW‐Freiburg Freiburg Germany

Abstract

AbstractBackgroundThe ZAP‐X system is a novel gyroscopic radiosurgical system based on a 3 MV linear accelerator and collimator cones with a diameter between 4 and 25 mm. Advances in imaging modalities to detect small and early‐stage pathologies allow for an early and less invasive treatment, where a smaller collimator matching the anatomical target could provide better sparing of surrounding healthy tissue.PurposeA novel 3 mm collimator cone for the ZAP‐X was developed. This study aims to investigate the usability of a commercial diode detector (microSilicon) for the dosimetric characterization of this small collimator cone; and to investigate the underlying small field perturbation effects.MethodsProfile measurements in five depths as well as PDD and output ratio measurements were performed with a microSilicon detector and radiochromic EBT3 films. In addition, comprehensive Monte Carlo simulations were performed to validate the measurement observations and to quantify the perturbation effects of the microSilicon detector in these extremely small field conditions.ResultsIt is shown that the microSilicon detector enables an accurate dosimetric characterization of the 3 mm beam. The profile parameters, such as the FWHM and 20%–80% penumbra width, agree within 0.1 to 0.2 mm between film and detector measurements. The output ratios agree within the measurement uncertainty between microSilicon detector and films, whereas the comparisons of the PDD results show good agreement with the Monte Carlo simulations. The analysis of the perturbation factors of the microSilicon detector reveals a small field correction factor of approximately 3% for the 3 mm circular beam and a correction factor smaller than 1.5% for field diameters above 3 mm.ConclusionsIt could be shown that the microSilicon detector is well‐suitable for the characterization of the new 3 mm circular beam of the ZAP‐X system.

Publisher

Wiley

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