β-CoGa- und ɛ-NiIn-Filme aus metallorganischen Einkomponentenvorstufen: Ligandenkontrolle der Schichtzusammensetzung
Author:
Publisher
Wiley
Subject
General Medicine
Reference20 articles.
1. RHEED studies of epitaxial growth of CoGa on GaAs by MBE — determination of epitaxial phases and orientations
2. Interface stoichiometry dependence of the Schottky barrier height of CoGa and GaAs
3. Phase stability versus the lattice mismatch of (100)Co1−xGax thin films on (100)GaAs
4. Atomic‐scale morphology and interfaces of epitaxially embedded metal (CoAl)/semiconductor (GaAs/AlAs) heterostructures
5. Epitaxial growth of cobalt-gallium on gallium arsenide by organometallic chemical vapor deposition
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3. Koordinationschemie von Aluminium, Gallium und Indium an Übergangsmetallen;Angewandte Chemie;1999-10-04
4. [Ni{InC(SiMe3)3}4] – eine zu [Ni(CO)4] analoge metallorganische Nickel-Indium-Verbindung;Angewandte Chemie;1998-04-03
5. Reactivity of the Heavier Group‐13 Monochlorides [{CH(SiMe 3 ) 2 } 2 AlCl], InCl, TlCl, and of the Elements Ga and Hg Towards the Unsupported Ni‐Ni Bond of [{(η 5 ‐Cp)Ni(PEt 3 )} 2 ] — A Straightforward Synthetic Approach to the Synthesis of Mixed Main‐Group/Transition‐Metal Clusters Containing Unsupported Metal‐Metal Bonds;Chemische Berichte;1997-10
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