Recombination dynamics in self-assembled InP/GaP quantum dots under high pressure-Reference-Cited by-同舟云学术

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Recombination dynamics in self-assembled InP/GaP quantum dots under high pressure

Published:2004-11 Issue:14 Volume:241 Page:3263-3268
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Kristukat C.,Dworzak M.,Gonñi A. R.,Zimmer P.,Hatami F.,Dreßler S.,Hoffmann A.,Masselink W. T.,Thomsen C.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Radiative recombination from InP quantum dots on (100) GaP

2. Electronic structure of self-assembled InP/GaP quantum dots from high-pressure photoluminescence

3. High-pressure photoluminescence study of the electronic structure of InP/GaP quantum dots

4. Inhibited carrier transfer in ensembles of isolated quantum dots

5. InP quantum dots embedded in GaP: Optical properties and carrier dynamics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evidence of type-I direct recombination in InP/GaP quantum dots via magnetoluminescence;Applied Physics Letters;2009-10-12

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