High stability of CdZnSSe active layers in ZnSe-based laser diodes by introducing strain-compensating barrier layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference5 articles.
1. Significant progress in II-VI blue-green laser diode lifetime
2. 500-560 nm Laser Emission from Quaternary CdZnSSe Quantum Wells
3. Electrically pumped lasing from CdSe quantum dots
4. Doping dependent ZnCdSe/ZnSe-superlattice disordering
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1. CdZnSSe crystals synthesized in silicate glass: Structure, cathodoluminescence, band gap, discovery in historical glass, and possible applications in contemporary technology;Materials Research Bulletin;2020-03
2. Molecular Beam Epitaxy of Wide Gap II−VI Laser Heterostructures;Molecular Beam Epitaxy;2018
3. Molecular beam epitaxy of wide-gap II–VI laser heterostructures;Molecular Beam Epitaxy;2013
4. Demonstration of Practical Blue Waveguide Stark-Effect Modulators of ZnSe/ZnMgSSe Asymmetric Coupled Quantum Wells;Journal of the Korean Physical Society;2008-07-15
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