Picosecond time-resolved studies of excited state lifetime of Be acceptor in GaAs/AlAs multiple quantum wells
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs
2. Raman scattering and zone‐folding effects for alternating monolayers of GaAs‐AlAs
3. Light scattering from vibrational modes inGaAs−Ga1−xAlxAssuperlattices and related alloys
4. Observation of Folded Acoustic Phonons in a Semiconductor Superlattice
5. Optical Vibrational Modes and Electron-Phonon Interaction in GaAs Quantum Wells
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1. Donor-related third-order optical nonlinearites in GaAs/AlGaAs quantum wells at the THz region;Semiconductor Science and Technology;2011-05-18
2. Relaxation of the impurity photoconductivity inp-Ge/Ge1−xSixquantum well heterostructures;Semiconductor Science and Technology;2011-05-10
3. Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells;Chinese Physics B;2009-09
4. Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells;Acta Physica Sinica;2009
5. Tunable negative refraction in a two-dimensional active magneto-optical photonic crystal;Physical Review B;2005-05-16
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