Structural and electronic properties of chalcopyrite semiconductors AgXY2 (X = In, Ga; Y = S, Se, Te) under pressure

Author:

Chahed A.,Benhelal O.,Rozale H.,Laksari S.,Abbouni N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. in: Proc. Int. Symp. Physical Properties of Solids under High Pressure, CERN, Paris, 1970, p. 199, and reference therein.

2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys

3. Band alignments in GaInP/GaP/GaAs/GaP/GaInP quantum wells

4. and , Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications (Pergamon Press, Oxford, 1974).

5. Variation of the optical absorption edge in AgGaS2 single crystals at high pressure

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