Symmetric and asymmetric GaAs/Al0.3Ga0.7As double quantum well subjected to hydrostatic pressure and applied electric field
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices
2. Effect of residual acceptors on electron mobility in single asymmetric quantum wells
3. Band-gap renormalization and effective mass in double quantum wells
4. Electronic transitions in semiconductor quantum wells and epilayers under pressure
5. Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure
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1. Hydrostatic pressure, electric field, non-parabolicity and polaronic mass effects on the donor binding energy in a semimagnetic double quantum well;The European Physical Journal Plus;2023-10-27
2. The impact of hydrostatic pressure and temperature on the binding energy, linear, third-order nonlinear, and total optical absorption coefficients and refractive index changes of a hydrogenic donor impurity confined in GaAs/AlxGa1−xAs double quantum dots;The European Physical Journal Plus;2022-07
3. The effects of external fields on double GaAs/AlGaAs quantum well with Manning potential;Materials Science in Semiconductor Processing;2022-01
4. Hydrostatic pressure and temperature effects on spectrum of an off-center single dopant in a conical quantum dot with spherical edge;Superlattices and Microstructures;2021-11
5. Hydrostatic pressure and electric-field effects on the electronic and optical properties of InAs spherical layer quantum dot;Physica E: Low-dimensional Systems and Nanostructures;2012-09
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