Spin lifetime from the Hanle effect and fine structure of excitonic levels in InAlAs/AlGaAs quantum dots
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Ultralong Dephasing Time in InGaAs Quantum Dots
2. Spin Relaxation Quenching in Semiconductor Quantum Dots
3. Optical Studies of Single Quantum Dots
4. Quantum computation with quantum dots
5. Quantum gates using tunneling electron spins of a quantum-dot chain
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1. Band alignment transition from type I to type II in GaAs / AlxGa1-x As quantum ring;Physica E: Low-dimensional Systems and Nanostructures;2021-02
2. Effect of Al Ratio on Photoluminescence and Raman Scattering of InAlAs/AlGaAs Quantum Dots;Silicon;2018-09-26
3. Study of effects of size and Ga mole content ofIn1−xGaxAs/GaAsquantum ring on excitonic properties using the variational calculation;Physica B: Condensed Matter;2017-10
4. Power density and temperature effects on the photoluminescence spectra of InAlAs/GaAlAs quantum dots;Superlattices and Microstructures;2017-04
5. Effects of thickness layer on the photoluminescence properties of InAlAs/GaAlAs quantum dots;Applied Physics A;2016-08-10
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