Hydrostatic pressure, electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs-Ga1-xAlxAs quantum dots-Reference-Cited by-同舟云学术

Hydrostatic pressure, electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs-Ga1-xAlxAs quantum dots

Published:2009-03 Issue:3 Volume:246 Page:626-629
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Barseghyan M. G.,Kirakosyan A. A.,Duque C. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Pressure dependence of shallow bound states in gallium arsenide

2. Γ-Xmixing in GaAs/AlxGa1−xAs coupled double quantum wells under hydrostatic pressure

3. Band mixing dependence of the lowest energy states in uncoupled quantum wells

4. S. Adachi, Physical Properties of III-V Semiconductor Compounds (John Wiley & Sons, 1992), p. 106.

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