Transport measurements under pressure in III–IV layered semiconductors-Reference-Cited by-同舟云学术

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Transport measurements under pressure in III–IV layered semiconductors

Published:2007-01 Issue:1 Volume:244 Page:162-168
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Segura A.,Errandonea D.,Martínez-García D.,Manjón F. J.,Chevy A.,Tobias G.,Ordejón P.,Canadell E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Electrical Resistance under Pressure, including Certain Liquid Metals

2. The Electric Resistance to 30,000 Kg/Cm² of Twenty Nine Metals and Intermetallic Compounds

3. Diamond anvil cell and high-pressure physical investigations

4. Chapter 4 Optical Properties of Semiconductors under Pressure

5. Structure cristalline du monoséléniure d'indium InSe

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1. Recent progress on the characterization of the high-pressure behaviour of AVO4 orthovanadates;Progress in Materials Science;2018-08

2. Layered Indium Selenide under High Pressure: A Review;Crystals;2018-05-09

3. High-pressure phase transitions and properties of MTO4 compounds with the monazite-type structure;physica status solidi (b);2017-02-10

4. Ab initio investigation into structural, mechanical and electronic properties of low pressure, high pressure and high pressure-high temperature phases of Indium Selenide;Computational Materials Science;2016-11

5. Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe;Physical Review B;2014-12-01

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