GaAs nanowires grown by MOVPE
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference56 articles.
1. Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?
2. GaAs free‐standing quantum‐size wires
3. Directional rolling of strained heterofilms
4. Fabrication of III-V nano- and microtubes using MOVPE grown materials
5. nano- and microtubes fabricated on (110)-oriented GaAs- and GaP-substrate using the metal-organic vapor-phase epitaxy
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2. Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging;New Journal of Physics;2016-06-20
3. Role of edge facets on stability and electronic properties of III–V nanowires;Nano Convergence;2015-07-08
4. Self-Seeded Growth of GaAs Nanowires by Metal–Organic Chemical Vapor Deposition;Crystal Growth & Design;2015-05-14
5. Growth Process Modeling of III–V Nanowire Synthesis via Selective Area Metal–Organic Chemical Vapor Deposition;IEEE Transactions on Nanotechnology;2014-11
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