Cd desorption induced by Zn exposure during atomic layer epitaxy of CdxZn1-xTe
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Zn and Te desorption from the (100) ZnTe surface
2. Cd and Te desorption from (001), (111)B, and (110) CdTe surfaces
3. Reconstruction and stoichiometry of CdTe(001) surfaces: a grazing incidence X-ray diffraction and reflection high energy electron diffraction study
4. Atomic layer epitaxy of CdTe and MnTe
5. INTERACTION BETWEEN Zn AND Cd ATOMS DURING THE ATOMIC LAYER EPITAXY GROWTH OF CdZnTe/ZnTe QUANTUM WELLS
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1. Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells;Journal of Crystal Growth;2019-04
2. 7.1.5 Quantum wells and superlattices based on ZnTe and its alloys;Growth and Structuring;2013
3. Structural and electronic properties of Zn on a CdTe(001) surface;Solid State Communications;2009-07
4. Quantum islands formation and optical properties of CdZnTe/ZnTe quantum wells grown by atomic layer epitaxy;physica status solidi (b);2005-07
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