High-temperature defect study of tellurium-enriched CdTe:In-Reference-Cited by-同舟云学术

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High-temperature defect study of tellurium-enriched CdTe:In

Published:2006-03 Issue:4 Volume:243 Page:787-793
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Grill R.,Fochuk P.,Franc J.,Nahlovskyy B.,Höschl P.,Moravec P.,Zakharuk Z.,Nykonyuk Ye.,Panchuk O.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. (ed.), Properties of Narrow Gap Cadmium-based Compounds, EMIS Datareviews Series No. 10 (INSPEC, London, 1994).

2. Cadmium zinc telluride and its use as a nuclear radiation detector material

3. Point defects and diffusion in cadmium telluride

4. Electrical activity of In and Ga impurities in CdTe

5. High-temperature point defect equilibrium in CdTe modelling

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1. Structural and Electronic Properties of Indium-Doped n-type Cd-Se-Te Crystals;Journal of Electronic Materials;2024-04-29

2. First principles calculations of indium impurity- cadmium vacancy complex in CdTe;Functional materials;2018-09-27

3. Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method;physica status solidi (a);2017-02-06

4. Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe;Journal of Electronic Materials;2016-06-16

5. First-principlesDFT+GWstudy of oxygen-doped CdTe;Physical Review B;2016-05-16

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