Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di-t-butoxydiacetoxysilane-Reference-Cited by-同舟云学术

Direct Liquid Injection − Low Pressure Chemical Vapor Deposition of Silica Thin Films from Di-t-butoxydiacetoxysilane

Published:2017-07-17 Issue:12 Volume:19 Page:1700425
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv. Eng. Mater.

Author:

Vervaele Mattias¹,De Roo Bert¹,Debehets Jolien²,Sousa Marilyne³,Zhang Luman²,Van Bilzen Bart¹,Seré Stephanie¹,Guillon Herve⁴,Rajala Markku⁵,Won Seo Jin²,Locquet Jean-Pierre¹

Affiliation:

1. Department of Physics and Astronomy; Solid-State Physics; 3001 Heverlee Belgium

2. Department of Materials Engineering; 3001 Heverlee Belgium

3. IBM Research GmbH; 8803 Rueschlikon Switzerland

4. Kemstream; 34000 Montpellier France

5. DCA Instruments; 20360 Turku Finland

Funder

SNOWCONTROL

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adem.201700425/fullpdf

Reference28 articles.

1. THE PROTECTION OF ALLOYS AGAINST HIGH TEMPERATURE SULPHIDATION BY SiO2-COATINGS DEPOSITED BY MOCVD

2. The pyrolytic decomposition of metal alkoxides(di-acetoxy-di-t-butoxy-silane, DADBS) during chemical vapour deposition of thin oxide films

3. Lpcvd of silicon oxide films in the temperature range 410 to 600°C from diacetoxyditertiarybutoxysilane

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