Femtosecond Laser Lift‐Off with Sub‐Bandgap Excitation for Production of Free‐Standing GaN Light‐Emitting Diode Chips-Reference-Cited by-同舟云学术

Femtosecond Laser Lift‐Off with Sub‐Bandgap Excitation for Production of Free‐Standing GaN Light‐Emitting Diode Chips

Author:

Bornemann Steffen¹²,Yulianto Nursidik¹²³,Spende Hendrik¹²,Herbani Yuliati³,Prades Joan Daniel⁴^ORCID,Wasisto Hutomo Suryo¹²,Waag Andreas¹²

Affiliation:

1. Institute of Semiconductor Technology (IHT) Technische Universität Braunschweig Hans-Sommer-Straße 66 D-38106 Braunschweig Germany

2. Laboratory for Emerging Nanometrology (LENA) Technische Universität Braunschweig Langer Kamp 6 D-38106 Braunschweig Germany

3. Research Centre for Physics Indonesian Institute of Sciences (LIPI) Jl. Kawasan Puspiptek No. 441-442 15314 Tangerang Selatan Indonesia

4. MIND-IN2UB Department of Electronic and Biomedical Engineering University of Barcelona Martí i Franquès 1 E-08028 Barcelona Spain

Funder

Niedersächsische Ministerium für Wissenschaft und Kultur

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

Reference44 articles.

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