Small size low noise amplifier with suppressed noise from gate resistance-Reference-Cited by-同舟云学术

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Small size low noise amplifier with suppressed noise from gate resistance

Published:2008-09 Issue:9 Volume:50 Page:2300-2304
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Song Ickhyun,Jhon Hee‐Sauk,Jung Hakchul,Koo Minsuk,Shin Hyungcheol

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. A 1.5‐V, 1.5‐GHz CMOS low noise amplifier;Shaeffer;IEEE J Solid‐State Circ,1997

2. A 4‐mW monolithic CMOS LNA at 5.7‐GHz with the gate resistance used for input matching;Asgaran;IEEE Microwave Wireless Compon Lett,2006

3. Packaged single‐ended CMOS low noise amplifier with 2.3 dB noise figure and 65 dBm IIP2;Li;Electron Lett,2004

4. D. Linten et al., Low‐power low‐noise highly ESD robust LNA, and VCO design using above‐IC inductors, IEEE Custom Integr Circ Conf (2005), 497–500.

5. Distortion in RF CMOS short‐channel low‐noise amplifiers;Baki;IEEE Trans Microwave Theory Tech,2006

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