InGaN/GaN dot-in-a-wire: ultimate terahertz nanostructure-Reference-Cited by-同舟云学术

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InGaN/GaN dot-in-a-wire: ultimate terahertz nanostructure

Published:2015-01 Issue:1 Volume:9 Page:105-113
ISSN:1863-8880
Container-title:Laser & Photonics Reviews
language:en
Short-container-title:Laser & Photonics Reviews

Author:

Sun Guan¹,Chen Ruolin¹,Ding Yujie J.¹,Nguyen Hieu P. T.²,Mi Zetian²

Affiliation:

1. Department of Electrical and Computer Engineering; Lehigh University; Bethlehem PA 18015 USA

2. Department of Electrical and Computer Engineering; McGill University; Montreal Quebec H3A 0E9 Canada

Publisher

Wiley

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/lpor.201400138/fullpdf

Reference42 articles.

1. Cutting-edge terahertz technology

2. Materials for terahertz science and technology

3. An on-chip near-field terahertz probe and detector

4. Terahertz field enhancement by a metallic nano slit operating beyond the skin-depth limit

5. Greatly enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunable Dual-Wavelength Self-injection Locked InGaN/GaN Green Laser Diode;IEEE Access;2019

2. Infrared emitters using III-nitride semiconductors;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018

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