Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in sublimation, epitaxy, and phase transitions-Reference-Cited by-同舟云学术

Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in sublimation, epitaxy, and phase transitions

Published:1992-02-15 Issue:4 Volume:20 Page:341-351
ISSN:1059-910X
Container-title:Microscopy Research and Technique
language:en
Short-container-title:Microsc. Res. Tech.

Author:

Latyshev A. V.,Krasilnikov A. B.,Aseev A. L.

Publisher

Wiley

Subject

Medical Laboratory Technology,Instrumentation,Histology,Anatomy

Reference20 articles.

1. and (1987) Reflection electron microscopy study of the structure of atomic clean silicon surface. In: Defects in Crystal. ed. World Scientific, Singapore, pp. 231-237.

2. and (1986) Study of structural transformation on atomic clean surface of semiconductors by ultrahigh vacuum reflection electron microscopy. In: Problemy Electronnogo Materialovedeniya, Novosibirsk, ed. Nauka, pp. 109-127 (in Russian).

3. Reflection electron microscopy (REM) of vicinal surfaces of fcc metals

4. REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2×1 and 1×2 Induced by Specimen Heating Current

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