Experimental verification of the theoretical model for the photoionization of deep impurity centres in semiconductors-Reference-Cited by-同舟云学术

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Experimental verification of the theoretical model for the photoionization of deep impurity centres in semiconductors

Published:1970 Issue:2 Volume:42 Page:617-625
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Zavadskii Yu. I.,Kornilov B. V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Absorption spectra of impurities in silicon—I

2. , and , Photoconductivity Conf., Atlantic City 1954, Wiley, New York 1956 (p. 353).

3. Optical Properties of Indium-Doped Silicon

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Donor-Acceptor Pairs in Silicon;MRS Proceedings;1992

2. Bound-to-bound transitions at neutral zinc in silicon: Effective-mass-like states and hole-hole interaction;Physical Review B;1989-12-15

3. Optical cross sections associated with deep-level impurities in semiconductors;Physical Review B;1986-06-15

4. Asymmetries in photoconductive properties of donor and acceptor impurities in silicon;Journal of Applied Physics;1984-04-15

5. Optical cross sections associated with deep levels in semiconductors. II. Comparison of theory with experiment;Journal of Physics C: Solid State Physics;1982-10-20

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