Investigation of the resistance and magnetoresistance in uniaxially stressed n-germanium
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Piezoresistance Effect in Germanium and Silicon
2. Transport Properties of a Many-Valley Semiconductor
3. High-Stress Piezoresistance and Mobility in Degenerate Sb-Doped Germanium
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Application of high uniaxial strain methods for semiconductor parameter determination;Physica B: Condensed Matter;2013-05
2. A device for high uniaxial compression of single crystal specimens at low temperatures;Cryogenics;1978-03
3. Piezoresistance and Magnetopiezoresistance of n-Ge in the [110] Direction;Physica Status Solidi (b);1971-08-01
4. The determination of the deformation potential constants in n-germanium;Physica Status Solidi (b);1971-05-01
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