Dislocation Pinning Rate in Electron-Irradiated Copper
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Evidence for a Defect Conversion Mechanism in Copper
2. The interpretation of electron radiation damage in F.C.C. metals in terms of the conversion-two-interstitial model
3. Three-Dimensional versus Crowdion Migration of Interstitials in Annealing Stage I of Irradiated Metals
4. Temperature dependence from 250°K to 370°K of dislocation pinning in copper single crystals by radiation defects
5. Effect of Fast Neutron Bombardment at Various Temperatures upon the Young's Modulus and Internal Friction of Copper
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Defect migration in the range of 100°K to 330°K;Radiation Effects;1979-01
2. Critical test of radiation-damage models by means of dislocation pinning experiments on copper;Philosophical Magazine;1977-06
3. The kinetics of dislocation pinning at low temperatures;physica status solidi (b);1975-02-01
4. Energy dependence of the defect production at 78 k and 400 k in electron irradiated copper;Radiation Effects;1975-01
5. Defect Dragging by Dislications. Theory and Experiment in the Amplitude Independent and Dependent Regions;Internal Friction and Ultrasonic Attenuation in Crystalline Solids;1975
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