A novel efficiency-enhancement topology: GaN high-electron mobility transistors with waveform-modulation structure composed of Schottky diodes-Reference-Cited by-同舟云学术

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A novel efficiency-enhancement topology: GaN high-electron mobility transistors with waveform-modulation structure composed of Schottky diodes

Published:2018-03-05 Issue:5 Volume:46 Page:1101-1110
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int J Circ Theor Appl

Author:

Han Kefeng¹^ORCID

Affiliation:

1. China Electronics Technology Group Corp 55th Research Institute; Nanjing 211103 China

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. 0.5 μm AlGaN/GaN HEMT and its application;Ren;Res Prog Solid State Electron,Oct. 2011

2. 60W high efficiency X-band GaN HEMT power amplifier MMIC;Tao;Res Prog Solid State Electron,Aug. 2016

3. 0.15 μm GaN HEMT and its application;Ren;Res Prog Solid State Electron,June, 2013

4. L band high efficiency matching GaN HEMT;Yin;Semicond technol,Jul. 2014

5. Development of high efficiency X-band GaN MMIC power amplifier;Cui;Semicond technol,Jul. 2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Employing simplified resistance–inductance–capacitance equivalent circuits to analyze and confirm a gallium nitride‐based current linear regulator for laser diode controls;International Journal of Circuit Theory and Applications;2022-07-15

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