Enhanced current mirror circuit by dual‐gate coplanar amorphous InGaZnO TFTs-Reference-Cited by-同舟云学术

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Enhanced current mirror circuit by dual‐gate coplanar amorphous InGaZnO TFTs

Published:2021-12-06 Issue: Volume: Page:
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int J Circ Theor Appl

Author:

Rahaman Abidur¹^ORCID,Adhikary Apurba¹,Hossain Mohammad Amzad¹,Islam Md Mobaidul²,Jang Jin²

Affiliation:

1. Department of Information and Communication Engineering Noakhali Science and Technology University Noakhali Bangladesh

2. Department of Information Display Kyung Hee University Seoul South Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/cta.3198

Reference18 articles.

1. High speed and wider swing, level shifter using low‐temperature poly‐silicon oxide TFTs;Rahaman A;IEEE Electron Device Letter,2019

2. Transparent current mirrors with a‐IGZO TFTs: neural modeling, simulation, and fabrication;Bahubalindruni PG;Journal of Display Technology,2013

3. BahubalindruniP TavaresV DuarteC CardosoN OliveiraP BarquinhaP MartinasR FortunatoE.Transparent current mirrors using a‐IGZO TFTS: simulation with RBF models and fabrication.UKSim‐AMSS 16thInternational Conference on Computer Modeling and Simulation 2014 pp.581‐585.https://doi.org/10.1109/UKSim.2014.98

4. Bias stress and temperature impact on InGaZnO TFTs and circuits;Martins J;MDPI Materials,2017

5. Light emission from a poly‐silicon device with carrier injection engineering;Xu K;Materials Science & Engineering B,2018

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