57.3:Distinguished Paper: New Pixel Circuits for Controlling Threshold Voltage by Back-gate Bias Voltage using Crystalline Oxide Semiconductor FETs-Reference-Cited by-同舟云学术

57.3:Distinguished Paper: New Pixel Circuits for Controlling Threshold Voltage by Back-gate Bias Voltage using Crystalline Oxide Semiconductor FETs

Published:2015-06 Issue:1 Volume:46 Page:857-860
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Kaneyasu Makoto¹,Toyotaka Kouhei¹,Shishido Hideaki¹,Isa Toshiyuki¹,Eguchi Shingo¹,Miyake Hiroyuki¹,Hirakata Yoshiharu¹,Yamazaki Shunpei¹,Dobashi Masayoshi²,Fujiwara Chieko²

Affiliation:

1. Semiconductor Energy Laboratory Co., Ltd., 398, Hase, Atsugi-shi, Kanagawa 243-0036, Japan

2. Advanced Film Device Inc., 161-2 Masuzuka, Tsuga-machi, Tochigi-shi, Tochigi 328-0114, Japan

Publisher

Wiley

Reference15 articles.

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5. Research, Development, and Application of Crystalline Oxide Semiconductor;Yamazaki;SID Symposium Digest,2012

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