69.3: a-IGZO TFTs Reliability Improvement by Dual Gate Structure
Author:
Affiliation:
1. Advanced Process Research Div., AU Optronics Corporation, Hsinchu, Taiwan
Publisher
Wiley
Reference11 articles.
1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices;Park;Thin Solid Films,2012
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4. Effect of annealing time on bias stress and light-induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors;Chowdhury;J. Appl. Phys,2011
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1. Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications;Journal of Semiconductors;2021-03-01
2. Amorphous Si–Zn–Sn–O Thin Film Transistor with In–Si–O as Transparent Conducting Electrodes;Transactions on Electrical and Electronic Materials;2019-07-09
3. Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors;Japanese Journal of Applied Physics;2017-11-27
4. Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate;Acta Physica Sinica;2017
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