MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices-Reference-Cited by-同舟云学术

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MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices

Published:1998 Issue:2 Volume:33 Page:183-195
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Lovergine N.,Prete P.,Leo G.,Calcagnile L.,Cingolani R.,Mancini A. M.,Romanato F.,Drigo A. V.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference23 articles.

1. Electronic states and binding energies in ZnS-ZnSe superlattices

2. The α-fringe contrast of thin twins in relation to the anomalous weak-beam contrast of stacking faults

3. Impact of electron confinement on the lasing properties of ZnS/ZnSe superlattices

4. Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs

5. et al.: J. Cryst. Growth (1995)

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