Growth of crystalline SiC films by triode plasma CVD using an organosilicon compound-Reference-Cited by-同舟云学术

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Growth of crystalline SiC films by triode plasma CVD using an organosilicon compound

Published:1999-02 Issue:2 Volume:82 Page:55-61
ISSN:8756-663X
Container-title:Electronics and Communications in Japan (Part II: Electronics)
language:en
Short-container-title:Electron. Comm. Jpn. Pt. II

Author:

Yasui Kanji,Kimura Masahide,Akahane Tadashi

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy

Reference19 articles.

1. Silicon carbide bipolar transistor

2. Electrical characteristics of ?-SiC MOS diode. Tech Rep IEICEJ CPM90-20, ED90-26, 1990.

3. Solution grown SiC p-n junctions

4. SiC blue LED's by liquid-phase epitaxy

5. Characteristics of SiC blue LED by CVD process. 51st Aut Conv Soc Appl Phys 29p-W-10, 1990.

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