30‐2: Top‐Gate Self‐Aligned InGaZnO TFTs with High PBTS Reliability by Employing Different H‐Incorporation Process
Author:
Affiliation:
1. National Engineering Laboratory for AMOLED Process Technology
2. Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.12945
Reference6 articles.
1. High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator
2. The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress
3. A Comparative Study on Fluorination and Oxidation of Indium–Gallium–Zinc Oxide Thin-Film Transistors
4. 21-2: Highly Reliable Amorphous Indium-Gallium-Zinc-Tin-Oxide TFTs with Back-Channel-Etch Structure
5. P-6: The Effects of Buffer Layers on the Electrical Characteristics and Stability of Self-Aligned Top-Gate IGZO Thin Film Transistors
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